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李力一职务:
单位:集成电路(ic)学院 电话: 出生年月: 邮箱:liyi_li@seu.edu.cn 学历:博士 地址: 职称:教授
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个人简介
国家高层次人才青年学者,ieee会员。2011年于北京大学化学与分子工程学院获得学士学位;2016年于海外获得博士学位。曾在海外著名公司担任材料分析高级工程师五年,负责先进封装技术研发工作。先后发表sci论文30余篇,ieee会议论文10余篇,专利授权1项。
教育经历
工作经历
讲授课程
教学研究
出版物

代表性论文:

1. yi, h.; zhao, j.; huang, y.; zhu, g.; mei, y.; li, z.; li, l.*, formation of graphene–silicon junction by room temperature reduction with simultaneous defects removal. ieee trans. electron devices. 2021,68 (2), 873-878.

2.  li, l.tuan, c.-c.; zhang, c.; chen, y.; lian, g.; wong, c. p. uniform metal-assisted chemical etching for ultra-high-aspect-ratio microstructures on silicon. ieee j. microelectromech. syst. 201928, 143.

3. li, l.zhang, c.; tuan, c.-c.; chen, y.; wong, c. p. high-aspect-ratio microstructures with versatile slanting angles on silicon by uniform metal-assisted chemical etching. j. micromech. microeng. 201828, 055006.

4. li, l.; li, b.; zhang, c.; tuan, c.-c.; lin, z.; wong, c.-p. a facile and low-cost route to high-aspect-ratio microstructures on silicon via a judicious combination of flow-enabled self-assembly and metal-assisted chemical etching. j. mater. chem. c 2016,4, pp 8953.

5. li, l.; song, b.; maurer, l.; lin, z.; lian, g.; tuan, c.-c.; moon, k.-s.; wong, c.-p. molecular engineering of aromatic amine spacers for high-performance graphene-based supercapacitors. nano energy 201621, pp 276.

6. li, l..; zhang, g.; wong, c. p. formation of through silicon vias in wafer level by metal-assisted chemical etching for silicon interposer. ieee transactions on components, packaging and manufacturing technology 20155, pp 1039.

7. li, l.; zhao, x.; wong, c. p. charge transport in uniform metal-assisted chemical etching (umace) for 3d high-aspect ratio micro- and nanofabrication on silicon. ecs. j. solid state sci. technol. 2015, 4, pp 337.

8. li, l.; zhao, x.; wong, c.-p. deep etching of single- and polycrystalline silicon with high speed, high aspect ratio, high uniformity and 3d complexity by electric bias-attenuated metal-assisted chemical etching (emace). acs appl. mater. interfaces 20146, pp 16782.

9. li, l.; liu, y.; zhao, x.; lin, z.; wong, c.-p. uniform vertical trench etching on silicon with high aspect ratio by metal-assisted chemical etching using nanoporous catalysts. acs appl. mater. interfaces 2014,6, pp 575.

授权专利:

1. li, l.; wong, c.p., et al. “metal-assisted chemical etching of a semiconductive substrate with high aspect ratio, high geometic uniformity, and controlled 3d profilesus”, u.s. patent 10,134,634

研究领域或方向

发展新工艺、新材料及相应表征技术,理解材料结构-性能关系和失效机理,搭建特色加工和检测设备,包括:

-图形化工艺与材料;

-互连工艺与材料:low-k介电层,导电材料,扩散阻挡层;

-三维封装工艺与材料:硅通孔,微凸点,铜-氧化硅混合键合;

-深硅刻蚀特色工艺:微纳深孔、深槽和斜孔、弯孔加工;

-mems、微流、光学器件加工;

-失效分析:薄膜与微纳结构的力学分析,界面分析,分子结构分析。

研究项目

-先进封装工艺与材料;-应用于mems、超材料等领域的微纳加工技术;-先进表征技术。

研究成果

代表性论文:

1.  yi, h.; zhao, j.; huang, y.; zhu, g.; mei, y.; li, z.; li, l.*, formation of graphene–silicon junction by room temperature reduction with simultaneous defects removal. ieee trans. electron devices. 2021,68 (2), 873-878.

2. li, l.tuan, c.-c.; zhang, c.; chen, y.; lian, g.; wong, c. p. uniform metal-assisted chemical etching for ultra-high-aspect-ratio microstructures on silicon. ieee j. microelectromech. syst. 201928, 143.

3. li, l.zhang, c.; tuan, c.-c.; chen, y.; wong, c. p. high-aspect-ratio microstructures with versatile slanting angles on silicon by uniform metal-assisted chemical etching. j. micromech. microeng. 201828, 055006.

4. li, l.; li, b.; zhang, c.; tuan, c.-c.; lin, z.; wong, c.-p. a facile and low-cost route to high-aspect-ratio microstructures on silicon via a judicious combination of flow-enabled self-assembly and metal-assisted chemical etching. j. mater. chem. c 2016,4, pp 8953.

5. li, l.; song, b.; maurer, l.; lin, z.; lian, g.; tuan, c.-c.; moon, k.-s.; wong, c.-p. molecular engineering of aromatic amine spacers for high-performance graphene-based supercapacitors. nano energy 201621, pp 276.

6. li, l..; zhang, g.; wong, c. p. formation of through silicon vias in wafer level by metal-assisted chemical etching for silicon interposer. ieee transactions on components, packaging and manufacturing technology 20155, pp 1039.

7. li, l.; zhao, x.; wong, c. p. charge transport in uniform metal-assisted chemical etching (umace) for 3d high-aspect ratio micro- and nanofabrication on silicon. ecs. j. solid state sci. technol. 2015, 4, pp 337.

8. li, l.; zhao, x.; wong, c.-p. deep etching of single- and polycrystalline silicon with high speed, high aspect ratio, high uniformity and 3d complexity by electric bias-attenuated metal-assisted chemical etching (emace). acs appl. mater. interfaces 20146, pp 16782.

9. li, l.; liu, y.; zhao, x.; lin, z.; wong, c.-p. uniform vertical trench etching on silicon with high aspect ratio by metal-assisted chemical etching using nanoporous catalysts. acs appl. mater. interfaces 2014,6, pp 575.

授权专利:

1. li, l.; wong, c.p., et al. “metal-assisted chemical etching of a semiconductive substrate with high aspect ratio, high geometic uniformity, and controlled 3d profilesus”, u.s. patent 10,134,634


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课题组常年招收有志于芯片制造工艺、材料研究的博士后、博士生、硕士生和访问学者。

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